MBRA210LT3 |
RFQ for MBRA210LT3 Required Field |
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| Technical/Catalog Information | MBRA210LT3G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 10V |
| Current - Average Rectified (Io) | 2A |
| Voltage - Forward (Vf) (Max) @ If | 350mV @ 2A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 700A @ 10V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Packaging | Digi-Reel? |
| Capacitance @ Vr, F | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MBRA210LT3G MBRA210LT3G MBRA210LT3GOSDKR ND MBRA210LT3GOSDKRND MBRA210LT3GOSDKR |
| Product | Manufacturers | Pack | D/C |
| MBRA210LT3 | ON Semiconductor | SMA(DO-214AC) | 2009+ |
Features |
| • Ultra Low VF• 1st in the Market Place with a 10 VR Schottky Rectifier• Compact Package with J-Bend Leads Ideal for Automated Handling• Highly Stable Oxide Passivated Junction• Guardring for Over-Voltage Protection• Optimized for Low Forward Voltage |
| Rating | Symbol | Value | Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
10 | V |
| Average Rectified Forward Current (At Rated VR, TL = 110) |
IO | 2.0 | A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) |
IFSM | 160 | A |
| Storage/Operating Case Temperature Operating Junction Temperature |
Tstg, TC TJ |
-55 to +125 |
|
| Voltage Rate of Change (Rated VR, TJ = 25) |
dv/dt | 10,000 | V/s |
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